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| FDMS8690 N-Channel PowerTrench(R) MOSFET March 2006 FDMS8690 N-Channel PowerTrench(R) MOSFET 30V, 19.8A, 9m General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device. Features Max rDS(on) = 9.0m at VGS = 10V, ID = 19.8A Max rDS(on) = 12.5m at VGS = 4.5V, ID = 11.5A High performance trench technology for extremely low rDS(on) and gate charge Minimal Qgd (2.9 nC typical) RoHS Compliant Applications High Efficiency DC-DC Converters Notebook Vcore Power Supply Multi purpose Point of Load PIN 1 S S S G 1 2 3 4 D MLP 5X6 D Symbol VDS VGS ID PD TJ, TSTG D D D TA=25oC unless otherwise noted 8 7 6 5 Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 20 (Note 1a) Units V V A W C C/W 19.8 90 2.8 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 44 115 Package Marking and Ordering Information Device Marking FDMS8690 FDMS8690 Rev B(W) (c)2006 Fairchild Semiconductor Corporation Device FDMS8690 Reel Size 7'' Tape width 12mm Quantity 3000 units www.fairchildsemi.com FDMS8690 N-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ rDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 30 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V ID = 250 A 1 1.6 -4.5 7.4 9.9 10.6 9 12.5 13.3 34 1 100 3 mV/C A nA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, V mV/C m ID = 250 A, Referenced to 25C VGS = 10 V, ID = 19.8 A ID = 11.5 A VGS = 4.5 V, VGS = 10 V, ID =19.8A, TJ = 125C Dynamic Characteristics Ciss Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg(5) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at VGS = 10V Total Gate Charge at VGS = 5V Gate-Source Charge Gate-Drain Charge VDS = 15 V, ID = 14 A f = 1.0 MHz VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1260 535 80 1.1 8 1.8 26 19 18.8 10 3.5 2.9 16 10 42 35 27 14 1680 715 120 pF pF pF ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Notes: 1. Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 45 33 V ns nC IF = 14 A, di/dt = 100 A/s RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a) 44C/W when mounted on a 1in2 pad of 2 oz copper b) 115 C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDMS8690 Rev B(W) www.fairchildsemi.com FDMS8690 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 VGS = 4V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.2 2.8 2.4 2.0 VGS = 4V VGS = 3.0V ID, DRAIN CURRENT (A) 80 VGS = 4.5V VGS = 3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 3.5V 60 40 20 0 VGS = 10V VGS = 3V 1.6 1.2 0.8 VGS = 10V VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 20 40 60 ID, DRAIN CURRENT(A) 80 100 Figure 1. On Region Characteristics Figure 2. Normal On-Resistance vs Drain Current and Gate Voltage 60 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 14A VGS = 10V ID = 50A 50 40 30 20 10 0 TJ = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 150oC -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 100 ID, DRAIN CURRENT (A) 80 60 40 20 0 1.0 TJ = TJ = 25oC TJ = -55oC 150oC Figure 4. On-Resistance vs Gate to Source Voltage 1000 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) VGS = 0V 100 10 1 0.1 0.01 0.2 TJ = 150oC TJ = 25oC TJ = -55oC 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDMS8690 Rev. B www.fairchildsemi.com FDMS8690 30V N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS,GATE-SOURCE VOLTAGE(V) 4000 ID=14A CISS 8 6 f = 1MHz VGS = 0V CAPACITANCE (pF) VDD=10V VDD=15V VDD=20V 1000 COSS 4 2 0 100 CRSS 0 5 10 15 Qg,GATE CHARGE (nC) 20 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 200 100 ID, DRAIN CURRENT (A) Figure 8. Capacitance Characteristics 18 10us 100us 10 1ms ID, DRAIN CURRENT (A) 15 12 9 6 3 0 25 RJA = 44 C/W o VGS=10V 1 10ms 100ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.1 SINGLE PULSE TJ = MAX RATED TA = 25oC 1s DC VGS=4.5V 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 75 100 125 o 150 TA, AMBIENT TEMPERATURE ( C) Figure 9. Forward Bias Safe Operating Area Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 1000 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 VGS=10V I = I25 10 150 - T A ----------------------125 1 SINGLE PULSE 0.1 -4 10 10 -3 10 -2 10 10 t, PULSE WIDTH (s) -1 0 10 1 10 2 10 3 Figure 11. Single Pulse Maximum Power Dissipation 4 FDMS8690 Rev. B(W) www.fairchildsemi.com FDMS8690 30V N-Channel PowerTrench(R) MOSFET 2 1 DUTY CYCLE - DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 Normalized Thermal Impedance ZJA 0.1 0.01 1E-3 SINGLE PULSE 1E-4 -4 -3 -2 -1 0 1 2 3 10 10 10 t, Rectangular Pulse Duration (s) 10 10 10 10 10 Figure 12. Transient Thermal Response Curve 5 FDMS8690 Rev. B(W) www.fairchildsemi.com FDMS8690 N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Lay-out FDMS8690 Rev B(W) 6 www.fairchildsemi.com FDMS8690 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production FDMS8690 Rev. B(W) 7 www.fairchildsemi.com |
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